dangling bonds中文是什么意思

• 悬挂键
• 悬空键

• "dangle"中文翻译    vi. 1.(晃来晃去地)吊着；悬挂着。 2.尾随，追逐 ...
• "bond"中文翻译    n. 〔废语〕农奴；奴隶。 adj. 被奴役的；奴隶的〔 ...
• "dangling" 中文翻译 :    悬挂的, 悬浮的, 悬摆的
• "dangling bond" 中文翻译 :    不饱和键; 不饱和键；悬空键; 悬挂键; 悬键; 悬空键; 自由键
• "dangling man" 中文翻译 :    晃来晃去/挂起来的人; 晃来晃去的人
• "dangling modifier" 中文翻译 :    垂悬修饰语; 无明确对象修饰语; 无依着修饰语
• "dangling modifiers" 中文翻译 :    垂悬; 悬垂修饰语
• "dangling participle" 中文翻译 :    虚悬分词
• "dangling pointer" 中文翻译 :    悬摆指针; 悬挂指针
• "dangling reference" 中文翻译 :    挂起引用; 悬摆指针; 悬挂访问; 悬挂引用
• "dangling references" 中文翻译 :    悬宕参考
• "bonds" 中文翻译 :    邦兹; 公司债; 镣铐, 监禁; 债券，债票; 债券市场，债市
• "in bonds" 中文翻译 :    在拘留中
• "butterfly dangling ornament" 中文翻译 :    彩蝶吊饰
• "dangling ornament worn by women" 中文翻译 :    步摇
• "prevention of dangling pointer" 中文翻译 :    防止悬挂指针
• "registered bonds and coupon bonds" 中文翻译 :    记名债券及息票债券
• "treasury bonds (t-bonds)" 中文翻译 :    国库券
• "active bonds" 中文翻译 :    活动债券; 买卖活跃的债券
• "agency bonds" 中文翻译 :    机构债券由政府机构发行的债券
• "alternate bonds" 中文翻译 :    更迭键
• "asiandollar bonds" 中文翻译 :    亚洲美元债券
• "assented bonds" 中文翻译 :    经持有人认可的债券
• "assumed bonds" 中文翻译 :    【商业】保付证券〔由一公司发行、由另一公司保付的证券〕。
• "atomic bonds" 中文翻译 :    原子键

• The dangling bonds associated with the dislocation core determine to a large extent the electrical and optical properties of the dislocations .
  与位错核心相联系的悬空键在很大程度上决定着位错的光学电学性质。
• Dangling bonds exist at the surface of porous silicon , which leads to the drop of the light - emitting efficiency . to apply porous silicon into practice , surface modification is necessary
  多孔硅表面存在大量的悬挂键，容易引起发光效率的降低，行之有效的克服方法是进行表面修饰。
• These quenching centers can quench both blue emission related to the surface defects and the orange emission of mn2 + impurities . they are most likely originated from the dangling bonds of the lone pairs on surface s2 " or the zn2 + vacancies
  这种表面猝灭中心对自激活蓝光和橙光发射都有猝灭作用，它们极有可能来自表面s ~ ( 2 - )孤对电子的悬空键或zn ~ ( 2 + )空位。
• On one hand , these organic function groups decorate the surface of nanoparticles by combining with the surface dangling bonds . and most important , they may act partially as the donor of d - a pairs in the sa luminescence by providing electrons
  讨论了吸附在纳米颗粒表面的一oh ，一ch = ;和一coo等有机官能团的作用，明确提出了这些官能团中的一部分可能充当了自激活发光施主一受主对中施主的观点
• We can lessen the dangling bonds and bug in order to improve the ion / ioff 、 vth by hydrogenation . in general , hydrogenation is prepared after completing of tft , in this way , we need more radio frequency power and time , so the cost of hydrogenation will raise
  而通过氢化可以大大降低多晶硅薄膜晶粒边界中的悬挂键和界面陷阱,从而显著提高tft的场效应迁移率和开态电流,减少关态电流,提高tft的电学性能。
• At the same time , we experimented by varying substrate temperature , and found that high substrate temperature is favorable to hydrogen elimination and thus improve the structure of films , but over high substrate temperature leads to the increase of dangling bonds
  同时，我们研究了衬底温度对a - si ： h结构的影响，发现高衬底温度有利于沉积过程中的释氢反应，从而改善薄膜的结构，但过高的衬底温度将导致悬挂键的增多。
• Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays , as it is most feasible approach to high resolution , high integration and low power consumption as a result of its high aperture ration . there are less number interface of the crystal grain , lower metal impurity and higher mobility in the electric current director , the milc p - si tft has been the research focus in the fields of amlcd , projection display , oled etc . there are vast dangling bonds and bug
  多晶硅薄膜晶体管( p - sitft )液晶显示器可以实现高分辨率、高集成度、同时有效降低显示器的功耗,因而成为目前平板显示领域主要研究方向;而以横向晶化多晶硅为有源层的tft由于在导电方向有更少的晶界、更低的金属杂质污染、更高的载流子迁移率而成为目前有源矩阵液晶显示领域、投影显示、 oled显示等领域研究的热点。
• The photoelectric property of a - si : h films is closely associated with hydrogen content in films . on the one hand , hydrogen incorporated as monohydride ( si - h ) saturates dangling bonds in films , and on the other hand , hydrogen incorporated as polyhydride ( si - h2 , si - h3 , ( si - h2 ) n ) introduces defect in films and thus increases the density of localized electronic states in band gap
  A - si ： h薄膜的光电特性同膜中的氢存在密切关系，一方面，氢以单氢化合物( si - h )方式结合到膜中，从而饱和了膜中的悬挂键；另一方面，氢以多氢化合物( si - h2 、 si - h3和( si - h2 ) n )方式结合到膜中，反而在膜中引入了缺陷，使带隙中的局域态密度增大。